Abstract
Hall effect and conductivity results are presented on Si crystals containing from 5 × 10 17 to 1.6 × 10 18 cm −3 of oxygen and various dopings of B, Al and Ga before and after reaction at various temperatures (410–1350°C). Evidence in support of the tetrahedral SiO 4 model for the donor formed from oxygen suggested by Kaiser is presented. A large hole-electron effect is noted in the presence of excess acceptor concentration. In addition, specific interactions with the acceptor atoms occur. Although the reactions are complex and are not understood, three kinds are postulated in order to account for the results : (1) The formation of isolated SiO 4 donors such as occurs in undoped Si crystals containing oxygen. (2) The reaction of oxygen at an acceptor atom to form a neutral compound or a “molecular pair”. (3) The formation of a donor involving eight oxygen atoms and an acceptor atom. The latter reaction is believed to occur most readily in the case of Al-doped crystals and, in an excess of oxygen, leads to the formation of one donor per Al atom.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
