Abstract
In this letter, we present the transmission electron microscopy and x-ray diffraction studies of Pd/GaAs (001) contacts that were annealed in an argon ambient with a pressure of 7×108 Pa. Our observations show that this ambient inhibits not only the decomposition of As-rich phases but the reactions accompanying the As sublimation for the Pd/GaAs (001) contacts and that the reactions are described as 4Pd+GaAs→Pd4GaAs (between 25 and 200 °C) and 3Pd+2GaAs→2PdGa+PdAs2 (between 350 and 800 °C).
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