Abstract
Electron spectroscopy and thermodynamic modelling have been used to examine reactions at the Al/SiO2/SiC layered interfaces at 800 °C. The reactions have been examined as a function of oxide thickness. Three regimes have been isolated: (i) where there is no oxide present aluminium and SiC react to produce Al4C3 and free silicon; (ii) where there is a thin oxide present the initial products are aluminosilicates and amorphous alumina; however, once the SiO2 is consumed, Al4C3 emerges as a product; (iii) where a thick oxide is present only aluminosilicate and alumina are formed.
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