Abstract
Fine diamond particles (from 0. 5 to 2μm) were successfully coated with silicon of 6. 6, 13. 8 and 20. 0vol% by PVD method. These coated particles were sintered under 5. 5GPa at 1723K for 0. 5h with a cubic type ultrahigh pressure apparatus. Silicon carbide in each sintered diamond compact was formed between the diamond particles during sintering and acted as a bonding material for the diamonds. The obtained sinter having silicon carbide of 21. 8vol% was fully densified and showed very high hardness (about 9700 HV 1. 0) as high as the diamond sinter produced for industrial usage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
