Abstract
Previous studies of the reaction of nitrogen atoms with Si(111) single crystal surfaces have been extended to the Si(100) surface. Results for reactions at 850 ≲ T < 1050°C indicate that the first stage is the formation of a layer with no long range order, thicker than that of equivalent stages in Si(111) reactions, but with electronic structure similar to that of the reactions on the quadruplet monolayer on Si(111). In contrast to reactions on Si(111), carbon plays no discernible role in reactions on Si(100). Thermal desorption measurements indicate, as for Si(111) reactions, that the only desorption product related to the structure reacted at T > 850°C is Si 2N. Reactions carried out at T ≲ 800°C produce Auger and ELS signals probably arising from intermediate configurations which are not thermodynamically stable.
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