Abstract

We have studied the reaction kinetics of titanium films on large-grained aluminium substrates during furnace annealing in vacuum for temperatures between 450–550°C. Oxygen was profiled by elastic resonance16O(α, α)16O backscattering. A TiAl3 aluminide layer always forms at the Ti/Al interface. In addition, a second TiAl3 layer grows at the free Ti surface when the contamination of the annealing ambient by oxygen-carrying species is reduced during annealing. Otherwise, the nucleation of the second compound layer is inhibited by an oxygen-rich surface layer of the Ti.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.