Reaction of CO with Preadsorbed Oxygen on Low-Index Copper Surfaces: An Ambient Pressure X-ray Photoelectron Spectroscopy and Scanning Tunneling Microscopy Study

Abstract

The reaction of CO with chemisorbed oxygen on three low-index faces of copper was studied using ambient pressure X-ray photoelectron spectroscopy (XPS) and high-pressure scanning tunneling microscopy. At room temperature, the chemisorbed oxide can be removed by reaction with gas-phase CO in the 0.01–0.20 Torr pressure range. The reaction rates were determined by measuring the XPS peak intensities of O and CO as a function of time, pressure, and temperature. On Cu(111) the rate was found to be one order of magnitude faster than that on Cu(100) and two orders of magnitude faster than that on Cu(110). The apparent activation energies for CO oxidation were measured as 0.24 eV for O/Cu(111), 0.29 eV for O/Cu(100), and 0.51 eV for O/Cu(110) in the temperature range between 298 and 473 K. These energies are correlated to the oxygen binding energies on each surface.