Abstract
The deposition mechanism for silicon oxide (SiOx) films grown by the mercury-sensitized photochemical vapor deposition (photo-CVD) method using silane (SiH4) and nitrous oxide (N2O) under irradiation of a low-pressure mercury lamp has been studied. An increasing-naximum-decrease pattern of the deposition rate with increasing silane partial pressure ratio (Ps=PSiH4/Ptotal) has been observed. Deposition rates for the SiO-like and SiO2-like films have been analyzed based on the Langmuir-Hinshelwood surface reaction theory. Rate equations were also derived. By means of the Arrhenius plots, activation energy of the surface reaction and the heat of adsorption can be determined.
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