Abstract
The annealing of structural defects caused by high energy implantation is studied using X-ray diffraction. The implanted sample (dose: 1 × 10 14 ions/cm 2) was isochronally annealed in flowing nitrogen in steps of 50 K upto 823 K for 10 min each, using a RTA system developed in Mumbai University. XRD patterns were recorded after each annealing and analyzed for strain and curvature. Also, the screw dislocation density was estimated at each stage of annealing using the FWHM of w scans in high resolution mode. The XRD profiles were simulated using the dynamical theory of X-ray diffraction for layer damage i.e. thickness, mismatch with respect to substrate, Debye Waller factor and sample curvature. The activation energy and characteristic temperature of annealing were estimated through reaction kinetics, utilizing the experimental XRD for progressive changes with temperature, of strain and dislocation density.
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