Abstract
The growth kinetics and optical properties of thin layers of MnSi1.73 have been studied. MnSi1.73 was formed by thermal reaction (485–570°C) of Mn-Si thin-film couples, through a nucleation-controlled process. MnSi1.73 is semiconducting and the band-gap energy was optically determined using a spectrophotometer and a sample with a single MnSi1.73 layer on a silicon substrate. The value was between 0.78 and 0.83 eV.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
