RE (RE = Sm, Eu, Gd)‐doped CeO2 single buffer layers for coated conductors prepared by chemical solution deposition

Abstract

AbstractTextured RE (RE = Sm, Eu, Gd)‐doped CeO2 single buffer layers for coated conductors were prepared by a polymer assisted chemical solution deposition (PACSD) approach. The as‐grown buffer layers on biaxially textured NiW(5%) alloy tapes were characterized by X‐ray diffraction (XRD) and scanning electron microscopy (SEM) as well as atomic force microscopy (AFM). The thicknesses of these buffer layers have been determined to be over 150 nm, on which a YBCO film has been deposited with an onset transition temperature above 90 K and a critical current density of 1 MA cm–2. These results indicate that RE doping can increase the critical thickness of CeO2 and PACSD may be a cost‐effective way to deposit CeO2. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)