Abstract
An improved technique for measuring re-emission coefficients is described and data on the effect of temperature are presented. These are discussed in the light of a physical model of film growth during sputtering where in constant re-emission of material throughout deposition occurs. Evidence is then presented that such re-emission is essential if films of high are to be obtained. To help assess quality in a quantitative fashion use has been made of the PBUT (pin-hole breakup thickness) phenomenon, whichis described in some detail. The influence on PBUT of several system parameters such as sputtering pressure and impurity content is discussed and related to the re-emission coefficient.
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