Abstract
on behalf of the RD50 Collaboration The need for radiation hard semiconductor detectors for the tracker regions in high energy physics experiments at a future high luminosity hadron collider, like the proposed LHC upgrade, has led to the formation of the CERN RD50 collaboration. The R&D directions of RD50 follow two paths: the optimization of radiation hard bulk materials (Material Engineering) and the development of new detector designs (Device Engineering) as 3D sensors, thin sensors and n-in-p sensors. Some of the RD50 most recent results about silicon detectors are reported in this paper, with special reference to: (i) identification of defects responsible for long term annealing, (ii) charge collection efficiency of irradiated planar devices, in particular n-in-p microstrip detectors and epitaxial diodes, (iii) charge collection efficiency of double-type column 3D detectors, (iv) comparison of the performances of FZ and MCZ structures under mixed irradiation.
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