RBS studies of solid-solid interfaces: Transition metals on aluminum

Abstract

The technique of ion backscattering and channeling has been used to study the interface stoichiometry and structure for thin transition metal films deposited on Al single crystal surfaces. Analysis of the backscattering data is based on the concepts of shadowing and blocking, and the well-known theory of Rutherford scattering. However, the analysis provides only the average stoichiometry of the interface, and can be limited by the energy resolution typical of solid state detectors. Problems in the analysis associated with near-surface dechanneling have been identified. In some cases we have used x-ray photoemission spectroscopy and computer simulations to eliminate these problems. In this paper we discuss alloy formation at interfaces of Al with Pd, Ni, Fe, and Co, and the epitaxial growth of fcc Ti and Ag on Al.