Abstract
In this report a qualitative analysis of nickel diffusion and precipitation processes in silicon, amorphized with nickel ions is performed in the temperature range which is common for various simultaneous silicon crystallization processes (solid phase epitaxial regrowth, silicide-mediated crystallization, random nucleation). Nonsteady nickel redistribution in silicon was found to be related with suicide-mediated crystallization processes. In its turn the assumed process of fast polycrystalline grains growth halts silicon solid phase epitaxial regrowth in such structures.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
