RBS-channeling spectra: simulation of as-implanted Si samples through an empirical formula for 〈100〉 axial dechanneling of He in silicon

Abstract

〈100〉 axial RBS-channeling spectra of deep as-implanted Si samples were simulated, using an empirical formula describing the dechanneling. The formula was obtained by dechanneling data in perfect 〈100〉 silicon below amorphous Si films. In fact, a single empirical formula fitted these data versus the He energy (1–2 MeV), the film area densities (0–1.3 × 10 18 at./cm 2) and the depth in the substrate (0–1 μm). Under the assumption that the dechanneling due to an amorphous layer is equal to that of an equivalent amount of displaced atoms in a perfect crystal, the formula was used to obtain the damage profile of as-implanted samples from RBS-channeling spectra.