RBS-channeling measurements of sapphire (0 0 1) substrate implanted with high-energy O and Cu ions

Abstract

Sapphire (0 0 1) substrates were implanted with 1.0 MeV O ions and 2.1 MeV Cu ions and subsequently annealed at different temperatures in vacuum, and recovery of radiation damage and redistribution of Cu in the sapphire substrate were examined by Rutherford backscattering spectrometry measurements with channeling technique. In addition, the formation of copper oxide nanoparticles has also been examined by X-ray diffraction (XRD) measurements. It is found that radiation damage in the sample is almost retained up to 800 °C. Further increase of annealing temperature causes significant recovery of radiation damage. Concurrently, annealing temperatures higher than 800 °C cause the enhancement of Cu diffusion. The results of XRD measurements show that nanoparticles are grown above 800 °C. These results suggest that the recovery of radiation damage gives rise to the redistribution of Cu and the formation of copper oxide nanoparticles.