Abstract
Rutherford backscattering spectrometry (RBS) in channeling regimes (RBS/C), as an ion beam analysis method performed on a Tandetron 6MV accelerator, generally gives precise information about the structure of crystalline samples by combining RBS signals in the random and aligned configurations. This paper presents details about the design and implementation of tailored RBS/C measurements (coarse and fine) and data evaluation application developed in MATLAB for in situ accelerator control system ARGUS, delivered by High Voltage Engineering Europa BV (HVEE). Additionally, we examined two different ways of stepping during the measurement to reduce the possible inaccuracies related with goniometer’s backslash affecting the evaluation of spectra. Verification experiment was carried out using a 2-MeV 4He+-beam directed on a Si (100) substrate. The channeling effect is seen as channeling dips of a lower signal in an otherwise rather homogeneous plane. Implemented application significantly facilitates the RBS/C measurement and analysis of the experiments, and also extends the ion beam analysis portfolio of Advanced Technologies Research Institute. Finally, software is ready-to-use for any Tandetron based ion beam facility with the ARGUS software for accelerator control.
Highlights
When semiconductors, metals, and other materials have ordered arrays of atoms, they form crystal material
MATLAB application for Rutherford backscattering spectrometry (RBS)/C measurements and evaluation was used over the existing accelerator software control system, ARGUS (Figure 6)
ARGUS and the Tandetron accelerator system subsequently was carried out using the Principally, MATLAB application for RBS/C measurements and evaluation was used batch (BTC) files with settings such as the ion beam start, the position of sample-goniomover the existing accelerator software control system, ARGUS (Figure 6)
Summary
Metals, and other materials have ordered arrays of atoms, they form crystal material. Rutherford backscattering spectrometry (RBS) has been widely used for investigations of solid-state surface layers [1]. The strong influence of the crystal lattice on the trajectories of ions penetrating the solid-state surface layers is known as channeling. A combination of RBS and channeling techniques provides the location of impurities, atoms, and defects distributions in crystals. This information is hardly obtainable from other measurements. In the case of standard RBS, we usually assume the random sample orientation and normal yield is obtained under non-channeling conditions. When the crystal sample is aligned, that is, the direction of the incident beam is oriented with respect to some axis or plane of the crystal (axial or planar channeling), the number of backscattered ions decreases considerably. In the case of 4 He+ primary beam in energy ranges from hundreds of keV to several MeV, the sample surface layer of up to 1 μm can be
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