Abstract
Abstract Band gap engineering has been opening a way to enhance the performance of two-dimensional (2D) material devices. Here we report a synthesis of ternary MS 2(1−x) Se 2x (M = Mo, W) alloys with a band gap tunability of ∼170 meV using a solid state reaction method. X-ray photoelectron spectroscopy and Raman scattering characterizations reveal that the change of Se contents can be utilized to tune the composition of the ternary MS 2(1−x) Se 2x (M = Mo, W) alloys. UV–vis–NIR absorption results conform the realization of tunable band gap in MS 2(1−x) Se 2x (M = Mo, W) alloys tailored by different Se contents. The electrical transport investigation of the ternary alloys exhibits an n-type semiconductor behavior demonstrated by back-gated field effect transistors.
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