Abstract
Using Kane's 8-band k· p theory and the envelope function approximation we derive a tight binding Hamiltonian for III–V semiconductor quantum well structures, which accurately models band structure and spin–orbit coupling. By applying a potential difference across the well we have calculated the Rashba spin-splitting in the lowest conduction subband. For identical well widths the Rashba splitting in InSb is shown to be approximately twice that of InAs and, in all cases, passes through a weak maximum with increasing quasimomentum.
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