Abstract
The values of the zero-field spin-splitting energy Δ 0 in InAlAs/InGaAs/InAlAs heterostructures are investigated using anti-weak-localization analysis. The obtained values for Δ 0 are compared with values that were theoretically predicted assuming Rashba spin–orbit coupling (denoted by Δ R). The good agreement between Δ 0 and Δ R and their dependence on quantum well asymmetry suggest that our approach provides a useful tool for designing future spintronics devices using Rashba spin–orbit coupling.
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