Abstract
Based on a double-layered semiconductor nanostructure (DLSN)-InSb/GaSb, we propose a controllable electron-spin filter for spintronics device applications. Electron-spin polarization is induced by Rashba spin-orbit coupling inside the DLSN. Both magnitude and sign of spin polarization ratio can be manipulated by externally-applied electric field or the semiconductor-layer thickness.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
