Abstract
The MOCVD growth of AlxGa1-xAs for application in high-power laser diodes was studied by using time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance (NR) were studied. Multi-layer AlxGa1-xAs structures with different Al compisition were grown on GaAs (001) substrates. The most suitable photon energy for monitoring the growth process was investigated. The NR and RAS signals at photon energy near the fundamental band gap showed an oscillatory behavior during the growth. The different contribution of surface-induced optical anisotropy and interface-induced optical anisotropy could be distinguished in situ by RAS transient spectra. The intensities of the RAS and NR signals were strongly dependent on the aluminium composition.
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