Rare-earth-doped waveguide devices

Abstract

Rare-earth-doped integrated optic waveguide lasers have been demonstrated in glass, LiNbO3, and other host materials. This technology offers a variety of new components that include diode-pumped amplifiers and lasers. The planar geometry is particularly attractive because selective doping permits the integration of passive and active devices on the same substrate and it is also compatible with pumping by laser diodes. Ion exchanged channel waveguides have been demonstrated to lase near 1060 nm and 1320 nm in Nd-doped silicate and Nd-doped phosphate glass, respectively. Nd-doped waveguide lasers have also been fabricated by chemical vapor deposition; Er-doped waveguide lasers have been similarly fabricated. Y-branch splitters with gain at 1060 nm have been reported in Nd-doped silicate glass waveguides. Ion implantation has been used to form waveguides in Nd-doped YAG and Nd-doped GGG. Nd and Er-doped LiNbO3 waveguide lasers operating near 1060 nm and 1550 nm, respectively, have also been reported. Attempts have been made to demonstrate visible upconversion lasing in Er-doped LiNbO3 and LiTaO3 waveguides. We will review the status of this technology and also highlight some of the more promising applications.