Abstract
The substitution of Y by Sm, Tb, Gd, and Ho in (BiYCa)3 (FeSiGe)5O12 bubble garnet is shown to have large effects on the growth-induced anisotropy Kgu. The presently accepted film composition intended for 6- or 8-μm period bubble memory devices demands partial substitution of Y by Gd and Ho. However, comparing films grown under the same growth conditions it is observed that YGdHoBiIG films possess less Kgu than their Gd, Ho-free counterparts. Thus, to satisfy Kgu requirements, the supercooling during growth must be increased by 20 K to 80 or 85 K with undesirable effects on defect densities. A new film composition containing Sm, Tb, and Gd has been formulated to satisfy all known material property specifications for 6- or 8-μm period memory devices. It can be grown with only 45–50 K supercooling.
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