Rare earth emitters coupled to Si nanoclusters in thin films

Abstract

The present article deals with the use of Si nanoclusters as efficient sensitizers towards Er 3+ or Nd 3+ ions. For this purpose, reactive magnetron co-sputtering process has been used for the fabrication of the doped layers. Depending on the deposition parameters, the photoluminescent properties of the rare earth have been analyzed. Thus, the effect of the hydrogen rate as a possible way to optimize the coupling rate between Er 3+ and Si nanoclusters has been evidenced. On the other part, we have shown that above a critical Nd concentration within the silicon rich silicon oxide layer (SRSO), a concentration quenching occurs and the photoluminescence of the Nd 3+ ions decreases dramatically. Two decay times have been determined linked to the surrounding of the Nd 3+ ions.