Rare earth doped GaN electroluminescent devices

Abstract

In this paper, we discuss the fabrication, operation and aplications of rare-earth-doped GaN electroluminescent devices (ELDs). GaN:RE ELDs. GaN:RE ELDs emit light due to impact excitation of the RE ions by hot carriers followed by radiative relaxation. By appropriately choosing the RE dopant, narrow line width emission can be obtained at selected wavelengths from the ultraviolet to the infrared. The deposition of GaN:RE layers is carried out primarily by MBE. GaN growth mechanism and optimization for RE emission are discussed based on RE concentration, growth temperature, and III-V ratio. We have investigated the optimum growth conditions of RE doped GaN phosphors.