Abstract
The decomposition of Gd3Ga5O12 single crystal target induced by a KrF excimer laser pulse during the deposition process was observed. This phenomenon was studied ex situ by EDX analyse of ablated target and in situ by Optical Emission Spectroscopy of the laser plasma. The decomposition process depends mainly on the absorption coefficient of the target on the corresponding laser wavelength and oxygen partial pressure in the deposition chamber during laser ablation. Taking into account the differences between absorption coefficients of Pr:Gd3Ga5O12 and Yb:Gd3Ga5O12 targets the Pr:GdGaO3 and Yb:GdGaO3 thin films were successfully fabricated at different oxygen pressures of 1 Pa and 2.5 Pa, respectively. The structural properties of the fabricated films were studied by RBS and XRD.
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