Abstract
The decomposition of Gd3Ga5O12 single crystal target induced by a KrF excimer laser pulse during the deposition process was observed. This phenomenon was studied ex situ by EDX analyse of ablated target and in situ by Optical Emission Spectroscopy of the laser plasma. The decomposition process depends mainly on the absorption coefficient of the target on the corresponding laser wavelength and oxygen partial pressure in the deposition chamber during laser ablation. Taking into account the differences between absorption coefficients of Pr:Gd3Ga5O12 and Yb:Gd3Ga5O12 targets the Pr:GdGaO3 and Yb:GdGaO3 thin films were successfully fabricated at different oxygen pressures of 1 Pa and 2.5 Pa, respectively. The structural properties of the fabricated films were studied by RBS and XRD.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
