Abstract
SiC npn Junction Transistors (SJTs) with current gains as high as 132, low on-resistance of 4 mΩ-cm2, and minimal emitter-size effect are demonstrated with blocking voltages > 600 V. 2400 V-class SJTs feature blocking voltages as high as 2700 V combined with on-resistance as low as 5.5 mΩ-cm2. A significant improvement in the current gain stability under long-term high current stress is achieved for the SJTs fabricated by the high gain process.
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