Abstract
Sb2Se3 thin films have been grown on Mo-coated glass substrate by rapid thermal process (RTP). In this paper, we investigate the effects of annealing temperature on selenizing metal precursor deposited by sputtering method. At optimized temperature, the best performed devices with the same structure as CIGS solar cells achieved the efficiency of 3.47% with an open circuit voltage of 414mV. This study provides a guideline to fabricate Sb2Se3 thin film by RTP and possibility in large scale industry application.
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