Abstract
Thin polycrystalline silicon oxide (polyoxide) layers were obtained by rapid thermal oxidation (RTO) growth in a cold wall rapid thermal processing (RTP) reactor using a pure dry O 2 (99.998%) atmospheric pressure. Oxidations were carried out both on classical POCl 3-doped low pressure chemical vapor deposition (LPCVD) polysilicon films and in situ PH 3-doped RTLPCVD polysilicon layers in order to point out the in situ integrated multiprocessing offered by RTP treatments. RTO films thicknesses were obtained both by means of spectrometric ellipsometry (SE) and capacitance–voltage ( C– V) measurements. It has been noted that polyoxide growth rates are more accelerated when the oxidation temperature increases and even more accelerated when the phosphorus dopant concentration is greater than 10 20 at/cm 3. In addition, X-ray photoelectron spectroscopy (XPS) characterization revealed the presence of a Si-rich polyoxide (SiO x , 1< x<2) layer at the vicinity of the polysilicon/polyoxide interface. However, sheet resistivity measurements and secondary ion mass spectrometry (SIMS) analysis showed that the RTO polyoxide process plays an effective role both as dopant activation step and a cap layer formation to block phosphorus outdiffusion. This process scheme may permit a tight control of the poly/polyoxide interface and thus insure a good device performance and reproducibility.
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