Abstract
In this paper we analyze the potential benefits of rapid thermal processing combined with metalorganic chemical vapor deposition (RT-MOCVD) for II–VI compounds and review our first results of the application of RT-MOCVD to the growth of CdTe/CdZnTe, CdTe/HgCdTe and ZnTe/CdTe heterostructures. The RT-MOCVD growth of (1 1 1) CdTe and ZnTe was performed in the A.G. Associates Heatpulse CVD-800™ system using a horizontal quartz reactor heated from both sides by tungsten-halogen lamps. The main features of RT-MOCVD of II–VI materials are: very high growth rates (up to 60 μm/h for CdTe and 30 μm/h for ZnTe); low point defect densities in the epilayers; more abrupt interfaces and less substrate surface degradation compared to conventional MOCVD. Potential of RT-MOCVD for MCT passivation has been shown.
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