Abstract
In this work, low pressure chemical vapor deposition (LPCVD) of SixGe1-x on Si and SiO2 has been considered for new applications in future ultra large scale integration (ULSI) technologies. Depositions were performed in a lamp heated cold-wall rapid thermal processor (rapid thermal chemical vapor deposition -RTCVD) using thermal decomposition of GeH4 and SiH2Cl2 in a carrier gas of H2. The process is a relatively low temperature/high throughput processes suitable to single wafer manufacturing. In this paper, we review potential applications of SixGe1-x in future MOS processes. Specifically, SixGe1-x has been considered for two new applications : i) Formation of ultra-shallow junctions in silicon using selectively deposited and implanted polycrystalline SixGe1-x as a diffusion source, ii) Formation of MOS gate structures with SixGe1-x gate electrodes for lower dopant activation temperatures and better threshold control.
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