Abstract
Rapid thermal annealing (RTA) of sputter-deposited ZnO/ZnO:N/ZnO multilayered structures formed by a combination of radio-frequency magnetron sputtering and a microwave plasma source was investigated for the fabrication of highly-crystallized ZnO:N films. The assistance of the microwave plasma source resulted in the enhancement of nitrogen incorporation into the ZnO films and the deterioration of film crystallization. On the other hand, crystallization of the ZnO:N layer was improved by RTA with no significant effusion and diffusion of N atoms using a ZnO/ZnO:N/ZnO multilayered structure. The role of the front and bottom ZnO layers during RTA of ZnO/ZnO:N/ZnO multilayered structures is demonstrated.
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