Abstract
High crystal-quality β-FeSi2 nanoparticles in silicon, prepared by ion beam synthesis and subjected to rapid thermal annealing (RTA), are investigated. Completely amorphous Fe–Si layers are formed by Fe implantation at cryogenic temperature, with a dosage of 5×1015cm−2, into float-zone silicon. After RTA at 900°C for 60s, β-FeSi2 precipitates are aggregated in the Si matrix and give ∼1.5μm photoluminescence. High-resolution plan-view transmission electron microscopy revealed that some strain is present in the RTA treated FeSi2 particles. Silicon dislocations, coming from the strain relaxation during the additional long-term annealing, are observed around β-FeSi2 particles.
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