Rapid Thermal Annealing of InP Implanted with Group IV Eleients

Abstract

ABSTRACTElectrical activation and carrier mobility have been studied as a function of ion dose and annealing temperature for InP implanted with Group IV elements (Si, Ge and Sn). In general, electrical activation increases with decreasing ion dose and/or increasing annealing temperature. Si and Sn exhibit comparable activation and mobility, superior to that of Ge, over the ion dose and temperature range examined. The relative influences of implantation-induced non-stoichiometry and the amphoteric behaviour of the group IV elements have been investigated. For the latter, the amphoteric behavior of Ge > Si > Sn.