Abstract
ABSTRACTThe effect of rapid thermal annealing (RTA) on the shapes of silicon dioxide capped symmetric coupled double GaAs/AlGaAs quantum wells (CDQW) has been investigated. In contrast to previous results on single quantum wells in which increases in exciton energies were observed after RTA, large decreases in exciton energies were seen in CDQWs. Furthermore, there was clear evidence, in the excitation spectrum and in increases in the lowest energy exciton lifetime, of asymmetry present in the heterostructure after RTA.
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