Abstract
BF <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</inf> is implanted into preamorphized silicon and annealed using radiative, incoherent rapid thermal annealing (RTA). Ion channeling tails are eliminated ans electrical activity of the entire profile is obtained during the solid-phase epitaxial regrowth of the amorphous silicon. This work shows that the shallow electrically active profiles are indistinguishable from the as-implanted profiles over the entire impurity depth distribution. Sheet resistance and SIMS data illustrate the effects. The RTA approach, in combination with preamorphized silicon, may have application to submicron MOS technology when junction depths <0.15 µm are required.
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