Abstract
Elevated-temperature (200°C) implants of 1014 and 1015 Hg ions cm−2 at 100keV have been successfully activated by rapid thermal annealing at temperatures of 750–850°C using a novel dual layer of Si3N4 and AlN as an encapsulant. P-type activity was found for all samples, yielding maximum hole concentrations of approximately HV = 8 × 1017 cm−3 and mobilities of 100 cm2/Vs. Sheet carrier concentrations were found to increase with temperature for 60s anneals, giving a value of 0.8 eV for the ‘activation energy’ of Hg implants in InP. Longer annealing times resulted in a degradation of the encapsulant and a corresponding reduction in electrical properties.
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