Abstract
We have studied the near-surface stoichiometry profiles of GaAs wafers subjected to rapid thermal annealing in a forming gas environment using the Rutherford backscattering (RBS) technique with a 33-MeV 16O beam. Our measured profiles quantify the extent of arsenic loss at uncapped wafer surfaces for high-temperature anneals. We have observed that a two-temperature step anneal results in a stoichiometry profile which is nearly RBS indistinguishable from that of an unannealed wafer.
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