Abstract
Spectroscopic ellipsometry (SE) has been used to study structural changes in P+-ion-implanted and rapid thermally annealed Si(100) wafers. P+ ion implantation was performed at 150 keV and a fluence of 2×1015 cm-2 at room temperature. Rapid thermal annealing was performed between 550° and 600°C in a dry N2 atmosphere. A model dielectric function (MDF), which was developed for modeling the optical constants of crystalline semiconductors, has been applied to investigate the optical properties of the ion-implanted and annealed layers. The recrystallization is found to occur from an amorphous/crystalline interface via two different thermally activated stages. The fast recrystallization rate of ∼10–200 Å/s, represented by that in the first stage, is probably caused by the rapid reordering of a poorly disordered region in the damage profile tail. Regular recrystallization subsequently occurs, which proceeds at a rate of ∼1–20 Å/s. The activation energies for the first and second recrystallization stages are determined to be 3.3 and 3.0 eV, respectively.
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