Rapid synthesis of MoS2 for transistors and memristors

Abstract

This study presents a rapid synthesis method using carbon fibers, converting ammonium tetrathiomolybdate to molybdenum disulfide films with controllable thickness (1–5 nm) and smooth surface (200 pm on average) in tens of seconds. Electronic devices based on these multilayers exhibit promising performance: memristors operate at an average of 1.5 V; field-effect transistors display electron mobility ranging from 0.1 to 0.4 cm2/V·s with a 103 on/off ratio. The electrical performance can be enhanced by optimizing annealing recipes. This scalable, time-efficient method holds the potential for large-scale production of multilayer two-dimensional semiconductors for electronics.