Abstract
This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma. As a plasma etching method operated at ambient pressure with no bias voltage, this method does not introduce any new SSD to the substrate. Plasma diagnosis and simulation are used to optimize the detection operation. Assisted by an SiC cover, a taper can be etched on the substrate with a high material removal rate. Confocal laser scanning microscopy and scanning electron microscope are used to analyze the etching results, and scanning transmission electron microscope (STEM) is adopted to confirm the accuracy of this method. The STEM result also indicates that etching does not introduce any SSD, and the thoroughly etched surface is a perfectly single crystal. A rapid SSD screening ability is also demonstrated, showing that this method is a promising approach for the rapid detection of SSD.
Highlights
Single crystal silicon carbide (4H-SiC) is considered one of the most promising third-generation semiconductor materials with applications in many cutting-edge fields, including electronics, optics, and graphene growth [1]. 4H-SiC has many excellent properties, such as a wide bandgap, low thermal expansion coefficient, high specific stiffness, good size stability, and high radiation resistance [2, 3]
This paper proposes a method for the rapid detection of subsurface damage (SSD) of SiC using atmospheric inductivity coupled plasma
A three-channel gas supporting system is connected to a quartz torch, which consists of three concentric tubes
Summary
Single crystal silicon carbide (4H-SiC) is considered one of the most promising third-generation semiconductor materials with applications in many cutting-edge fields, including electronics, optics, and graphene growth [1]. 4H-SiC has many excellent properties, such as a wide bandgap, low thermal expansion coefficient, high specific stiffness, good size stability, and high radiation resistance [2, 3]. The typical material removal rate (MRR) of SiC via the chemical mechanical polishing (CMP) method is ∼100 nm h−1 [10]. This process consumes a large amount of slurry, which can be toxic, contaminative, and expensive [11, 12]. The most widely used destructive method is taper polishing, which is based on removing the material to form a taper or dimple that crosses the SSD layer to the damage-free matrix and observing the revealed surface to measure the SSD thickness [14]. A demonstration of rapid SSD detection was performed to help understand the influence of several lapping parameters
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