Rapid Structure Perfection Diagnostics of GaAs Single Crystal by Diffraction of White X-Ray Radiation

Abstract

Sensitivity of X-ray integral reflectivity of GaAs single crystal to a degree of structure distortions was established to grow considerably in the Bragg diffraction case when tle characteristic Ag Κ, 1 line is changed for more hard white radiation. In effect, the absorption length essentially exceeds the extinction length what results in enlancement of incoherent scattering. Measurements of X-ray integral reflectivity coordinate dependence b y single crystal spectrometer permitted to determine the mean level of crystal 1attice distortion as well as the degree of structure homogeneity of a sample with dislocations. The Debye-Waller static factor value vas estimated from X-ray integral reflectivity magnitudes for the 800 reflection of white radiation.