Abstract
Dense cauliflower type nanostructured hematite (<inline-formula> <tex-math notation="LaTeX">$\alpha $ </tex-math></inline-formula>-Fe<sub>2</sub>O<sub>3</sub>) thin films were grown by plasma-enhanced chemical vapor deposition (PECVD) using ferrocene (Fe(C<sub>5</sub>H<sub>5</sub>)<sub>2</sub>) as precursor. The influence of the plasma parameters on the layer composition and growth rate was investigated and correlated with the plasma used during the deposition process. Optical emission spectroscopy (OES) data from the plasma in conjunction with scanning electron microscopy (SEM), energy dispersive spectrometry (EDX) and Raman spectroscopy showed that plasma power of about 50–120 W with an O<sub>2</sub> content of 10%–15% in the carrier gas Ar favors the growth of hematite rather than maghemite. The thickness of the thin films is position dependent due to the plasma reactor geometry. The growth rate can reach a very high value, up to 440 nm/min.
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