Abstract
This paper reported a Mn1.2Co1.5Ni0.3O4 thin film humidity sensor prepared according to the DC magnetron sputtering method. Scanning electron microscopy (SEM) was conducted to determine the morphology and microstructure of the film. The crystal structure and composition of the thin film were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDS), respectively. The impedance of the film changed by three orders of magnitude within the relative humidity (RH) range of 11% to 95% RH. Moreover, the response time and recovery time were shortened to 0.3 s and 3 s, respectively, as the deposition power decreased. The above results indicated that, the as-prepared Mn1.2Co1.5Ni0.3O4 thin film was an excellent candidate for humidity sensor applications.
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