Abstract
The rapid recrystallization of amorphous silicon utilizing the very high frequency (VHF) plasma jet of argon at atmospheric pressure is presented. Highly crystallized polycrystalline Si film was synthesized by optimizing the translating velocity of the substrate stage and flow rate of argon. The temperature of the plasma exposure area reached at 1300°C and the recrystallization of a-Si proceeded with a time constant of 10–50ms. The effects of the translating velocity of the substrate stage and flow rate of argon on the rapid recrystallization of a-Si are demonstrated along with its mechanism.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
