Abstract
Reaction sintering of silicon carbide (SiC) using a continuous-wave Nd:YAG laser as a heating source was investigated. The laser was used to irradiate pellets of a stoichiometric powder mixture of Si and C under Ar gas flow. At an appropriate laser power, a dense SiC layer was formed consisting of grains with a size of 100–500 nm; this layer was several micrometers thick. At lower laser power, fine grains of SiC were formed and dispersed in the unreacted Si–C matrix. On the other hand, at higher power, larger faceted SiC grains (1–3 µm) were formed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
