Abstract
Samples of indium-filled InxCo4Sb12 skutterudite with ZT ∼ 1.5 were successfully synthesized by conventional induction melting without the use of evacuated quartz ampoules.
Highlights
Thermoelectric materials (TEs) have attracted much attention due to their environment-friendly applications in power generation and refrigeration.[1,2] Among TEs, skutterudite antimonides have been considered as one of the best materials for applications at intermediate temperatures.[3,4,5] The speci c feature of skutterudites is the existence of interstitial voids in the body-centered cubic crystal structure
Structural characterization The powder X-ray diffraction measurements revealed (Fig. 1) that all the InxCo4Sb12 (x 1⁄4 0.2, 0.6, 1.0) samples crystallize in a cubic structure
Analysis of the X-ray diffraction (XRD) data indicates that the crystal lattice parameter a slightly increases from a 1⁄4 0.9041(3) nm to a 1⁄4 0.9056(8) nm as the nominal In content increases from x 1⁄4 0.2 to x 1⁄4 1.0 which is in good agreement with the lattice parameter reported in ref
Summary
Thermoelectric materials (TEs) have attracted much attention due to their environment-friendly applications in power generation and refrigeration.[1,2] Among TEs, skutterudite antimonides have been considered as one of the best materials for applications at intermediate temperatures.[3,4,5] The speci c feature of skutterudites is the existence of interstitial voids in the body-centered cubic (bcc) crystal structure (space group Im3). Addition of In above the filling fraction limit (x z 0.22) and adjustment of Sb excess in the induction-melted InxCo4Sb12 ingots allowed us to suppress formation of the unwanted CoSb2 phase in the sintered samples and effectively control the amount of the InSb impurity phase which precipitated in nanometer-sized regions along the grain boundaries of the main skutterudite phase.
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