Abstract
ABSTRACTThe temperature dependence of the so-called reverse dose rate effect for generation of vacancy-type defects in silicon has been investigated using samples implanted with 1.3 MeV protons at temperatures between 70 and 300 K. The effect is found to involve a thermally controlled process which exhibits an activation energy of ∼0.065 eV, possibly associated with rapid migration of Si self-interstitials (I). Further, using a concept of dual Si ion-implants long range migration of I:s at room temperature has been studied. Annihilation of vacancy-type defects at a depth of ∼3 μm is obtained by injection of I:s from a shallow implant with sufficiently high dose.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
